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xue/sim/ibis/micron_ddr2
Andres Calderon d6f7c20935 initial import
2010-07-24 06:58:53 -05:00
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2010-07-24 06:58:53 -05:00
2010-07-24 06:58:53 -05:00

2Gb DDR2 SDRAM IBIS models



The u49a IBIS models include On Die Termination (ODT) characteristics.  ODT is

modeled through the use of [Submodel] power and ground clamp I-V curves that

add the termination characteristics to the regular power and ground clamp

characteristics when the I/O is functioning as an input.  ODT applies to the

DQ, DQS/DQS#, RDQS/RDQS#, and DM signals.  Use the [Model Selector] to choose

between 50, 75, or 150 ohm ODT settings. 



NOTE: C_comp is lower for the ODT-enabled models versus the normal I/O model.

The C_comp value is set to match the input state of the DQ I/O as measured from

the HSPICE model.  Due to the C_comp differences between the DQ model and the

DQ_ODT* models, the output characteristics of the models will look different

when simulated.  So, to match most closely with the HSPICE model, simulate with

the DQ_FULL or DQ_HALF model for ALL Output simulations.  Use the ODT models

ONLY for Input simulations. 



All the speed grades are combined into a single IBIS file

Use the models labeled with 533 for the DDR2-400/533 speeds and the models 

labeled with 800 for the DDR2-667/800 speeds.



u49a.ibs Packaged model for commercial temperatures

u49a_bd.ibs Bare Die model

u49a_it.ibs Packaged model for industrial temperatures



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                Copyright 2006 Micron Technology, Inc. All rights reserved.