1
0
mirror of git://projects.qi-hardware.com/xburst-tools.git synced 2024-11-22 19:32:28 +02:00

[xbboot] copy 4769 files form Ingenic SVN: Revision: 1391

This commit is contained in:
Xiangfu Liu 2010-06-09 15:21:42 +08:00
parent 41ee624696
commit 0a13a84800
2 changed files with 1486 additions and 0 deletions

File diff suppressed because it is too large Load Diff

View File

@ -0,0 +1,210 @@
/*
* jz4760_board.h
*
* JZ4760 board definitions.
*
* Copyright (c) 2005-2008 Ingenic Semiconductor Inc.
*
*/
#ifndef __BOARD_JZ4760_H__
#define __BOARD_JZ4760_H__
//#define CONFIG_FPGA
//#define DEBUG
//#define CONFIG_SDRAM_MDDR
//#define CONFIG_SDRAM_DDR1
#define CONFIG_SDRAM_DDR2
//#define CONFIG_LOAD_UBOOT /* if not defined, load zImage */
/*-------------------------------------------------------------------
* Frequency of the external OSC in Hz.
*/
#define CFG_EXTAL 12000000
#define CFG_DIV 2 /* for FPGA */
/*-------------------------------------------------------------------
* CPU speed.
*/
#define CFG_CPU_SPEED 144000000 /* CPU clock */
/*-------------------------------------------------------------------
* Serial console.
*/
#define CFG_UART_BASE UART1_BASE
//CONFIG_BAUDRATE = 115200
/*-----------------------------------------------------------------------
* NAND FLASH configuration
*/
#define CFG_NAND_BW8 1 /* Data bus width: 0-16bit, 1-8bit */
#define CFG_NAND_PAGE_SIZE 2048
#define CFG_NAND_ROW_CYCLE 3
#define CFG_NAND_BLOCK_SIZE (256 << 10) /* NAND chip block size */
#define CFG_NAND_BADBLOCK_PAGE 127 /* NAND bad block was marked at this page in a block, starting from 0 */
#define CFG_NAND_BCH_BIT 4 /* Specify the hardware BCH algorithm for 4760 (4|8) */
#define CFG_NAND_ECC_POS 24 /* Ecc offset position in oob area, its default value is 3 if it isn't defined. */
#define CFG_NAND_BASE 0xBA000000
#define CFG_NAND_SMCR1 0x0D555500 /* 0x0fff7700 is slowest */
#define CFG_NAND_USE_PN 1 /* Use PN in jz4760 for TLC NAND */
#ifdef CONFIG_LOAD_UBOOT
#define CFG_NAND_U_BOOT_OFFS (CFG_NAND_BLOCK_SIZE*2) /* Offset to RAM U-Boot image */
#define CFG_NAND_U_BOOT_SIZE (512 << 10) /* Size of RAM U-Boot image */
#define CFG_NAND_U_BOOT_DST 0x80100000 /* Load NUB to this addr */
#define CFG_NAND_U_BOOT_START CFG_NAND_U_BOOT_DST /* Start NUB from this addr */
#else // load zImage
#define PARAM_BASE 0x80004000
#define CFG_KERNEL_OFFS (CFG_NAND_BLOCK_SIZE*2) /* NAND offset of kernel image being loaded */
#define CFG_KERNEL_SIZE (2 << 20) /* Size of kernel image */
#define CFG_KERNEL_DST 0x80100000 /* Load kernel to this addr */
#define CFG_KERNEL_START CFG_KERNEL_DST /* Start kernel from this addr */
#endif
#if (!defined(CONFIG_SDRAM_MDDR) && !defined(CONFIG_SDRAM_DDR1) && !defined(CONFIG_SDRAM_DDR2))
/*-----------------------------------------------------------------------
* SDRAM Info.
*/
#define CONFIG_NR_DRAM_BANKS 1 /* SDRAM BANK Number: 1, 2*/
#define CONFIG_MOBILE_SDRAM 1 /* use mobile sdram */
#ifndef CONFIG_MOBILE_SDRAM
// SDRAM paramters
#define SDRAM_BW16 0 /* Data bus width: 0-32bit, 1-16bit */
#define SDRAM_BANK4 1 /* Banks each chip: 0-2bank, 1-4bank */
#define SDRAM_ROW 13 /* Row address: 11 to 13 */
#define SDRAM_COL 9 /* Column address: 8 to 12 */
#define SDRAM_CASL 2 /* CAS latency: 2 or 3 */
// SDRAM Timings, unit: ns
#define SDRAM_TRAS 45 /* RAS# Active Time */
#define SDRAM_RCD 20 /* RAS# to CAS# Delay */
#define SDRAM_TPC 20 /* RAS# Precharge Time */
#define SDRAM_TRWL 7 /* Write Latency Time */
#define SDRAM_TREF 7812 /* Refresh period: 4096 refresh cycles/64ms */
#else /* Mobile SDRAM */
// SDRAM paramters
#define SDRAM_BW16 0 /* Data bus width: 0-32bit, 1-16bit */
#define SDRAM_BANK4 1 /* Banks each chip: 0-2bank, 1-4bank */
#define SDRAM_ROW 13 /* Row address: 11 to 13 */
#define SDRAM_COL 9 /* Column address: 8 to 12 */
#define SDRAM_CASL 3 /* CAS latency: 2 or 3 */
// SDRAM Timings, unit: ns
#define SDRAM_TRAS 50 /* RAS# Active Time */
#define SDRAM_RCD 18 /* RAS# to CAS# Delay */
#define SDRAM_TPC 20 /* RAS# Precharge Time */
#define SDRAM_TRWL 7 /* Write Latency Time */
#define SDRAM_TREF 7812 /* Refresh period: 4096 refresh cycles/64ms */
#endif /* CONFIG_MOBILE_SDRAM */
#else /* CONFIG_DDRC */
/*--------------------------------------------------------------------------------
* DDR2 info
*/
/* Chip Select */
#define DDR_CS1EN 0 // CSEN : whether a ddr chip exists 0 - un-used, 1 - used
#define DDR_CS0EN 1
#define DDR_DW32 1 /* 0 - 16-bit data width, 1 - 32-bit data width */
/* SDRAM paramters */
#if defined(CONFIG_SDRAM_DDR2) // ddr2
#define DDR_ROW 13 /* ROW : 12 to 14 row address */
#define DDR_COL 10 /* COL : 8 to 10 column address */
#define DDR_BANK8 1 /* Banks each chip: 0-4bank, 1-8bank */
#define DDR_CL 3 /* CAS latency: 1 to 7 */
/*
* ddr2 controller timing1 register
*/
#define DDR_tRAS 45 /*tRAS: ACTIVE to PRECHARGE command period to the same bank. */
#define DDR_tRTP 8 /* 7.5ns READ to PRECHARGE command period. */
#define DDR_tRP 42 /* tRP: PRECHARGE command period to the same bank */
#define DDR_tRCD 42 /* ACTIVE to READ or WRITE command period to the same bank. */
#define DDR_tRC 60 /* ACTIVE to ACTIVE command period to the same bank.*/
#define DDR_tRRD 8 /* ACTIVE bank A to ACTIVE bank B command period. */
#define DDR_tWR 15 /* WRITE Recovery Time defined by register MR of DDR2 memory */
#define DDR_tWTR 2 /* unit: tCK. WRITE to READ command delay. */
/*
* ddr2 controller timing2 register
*/
#define DDR_tRFC 128 /* ns, AUTO-REFRESH command period. */
#define DDR_tMINSR 6 /* Minimum Self-Refresh / Deep-Power-Down */
#define DDR_tXP 2 /* EXIT-POWER-DOWN to next valid command period: 1 to 8 tCK. */
#define DDR_tMRD 2 /* unit: tCK. Load-Mode-Register to next valid command period: 1 to 4 tCK */
/*
* ddr2 controller refcnt register
*/
#define DDR_tREFI 7800 /* Refresh period: ns */
#elif defined(CONFIG_SDRAM_MDDR) // ddr1 and mddr
#define DDR_ROW 14 /* ROW : 12 to 14 row address */
#define DDR_COL 10 /* COL : 8 to 10 column address */
#define DDR_BANK8 0 /* Banks each chip: 0-4bank, 1-8bank */
#define DDR_CL 3 /* CAS latency: 1 to 7 */
/*
* ddr2 controller timing1 register
*/
#define DDR_tRAS 40 /*tRAS: ACTIVE to PRECHARGE command period to the same bank. */
#define DDR_tRTP 12 /* 7.5ns READ to PRECHARGE command period. */
#define DDR_tRP 15 /* tRP: PRECHARGE command period to the same bank */
#define DDR_tRCD 20 /* ACTIVE to READ or WRITE command period to the same bank. */
#define DDR_tRC 55 /* ACTIVE to ACTIVE command period to the same bank.*/
#define DDR_tRRD 10 /* ACTIVE bank A to ACTIVE bank B command period. */
#define DDR_tWR 15 /* WRITE Recovery Time defined by register MR of DDR2 memory */
#define DDR_tWTR 2 /* WRITE to READ command delay. */
/*
* ddr2 controller timing2 register
*/
#define DDR_tRFC 90 /* ns, AUTO-REFRESH command period. */
#define DDR_tMINSR 6 /* Minimum Self-Refresh / Deep-Power-Down */
#define DDR_tXP 1 /* EXIT-POWER-DOWN to next valid command period: 1 to 8 tCK. */
#define DDR_tMRD 2 /* unit: tCK Load-Mode-Register to next valid command period: 1 to 4 tCK */
/*
* ddr2 controller refcnt register
*/
#define DDR_tREFI 7800 /* Refresh period: 4096 refresh cycles/64ms */
#elif defined(CONFIG_SDRAM_DDR1) // ddr1 and mddr
#define DDR_ROW 13 /* ROW : 12 to 14 row address */
#define DDR_COL 10 /* COL : 8 to 10 column address */
#define DDR_BANK8 0 /* Banks each chip: 0-4bank, 1-8bank */
#define DDR_CL 3 /* CAS latency: 1 to 7 */
#define DDR_CL_HALF 0 /*Only for DDR1, Half CAS latency: 0 or 1 */
/*
* ddr2 controller timing1 register
*/
#define DDR_tRAS 40 /*tRAS: ACTIVE to PRECHARGE command period to the same bank. */
#define DDR_tRTP 12 /* 7.5ns READ to PRECHARGE command period. */
#define DDR_tRP 15 /* tRP: PRECHARGE command period to the same bank */
#define DDR_tRCD 15 /* ACTIVE to READ or WRITE command period to the same bank. */
#define DDR_tRC 55 /* ACTIVE to ACTIVE command period to the same bank.*/
#define DDR_tRRD 10 /* ACTIVE bank A to ACTIVE bank B command period. */
#define DDR_tWR 15 /* WRITE Recovery Time defined by register MR of DDR2 memory */
#define DDR_tWTR 2 /* WRITE to READ command delay 2*tCK */
/*
* ddr2 controller timing2 register
*/
#define DDR_tRFC 70 /* ns, AUTO-REFRESH command period. */
#define DDR_tMINSR 6 /* Minimum Self-Refresh / Deep-Power-Down */
#define DDR_tXP 2 /* EXIT-POWER-DOWN to next valid command period: 1 to 8 tCK. */
#define DDR_tMRD 2 /* unit: tCK. Load-Mode-Register to next valid command period: 1 to 4 tCK */
/*
* ddr2 controller refcnt register
*/
#define DDR_tREFI 7800 /* Refresh period: 4096 refresh cycles/64ms */
#endif
#define DDR_CLK_DIV 1 /* Clock Divider. auto refresh
* cnt_clk = memclk/(16*(2^DDR_CLK_DIV))
*/
#endif /* CONFIG_DDRC */
#endif /* __BOARD_JZ4760_H__ */