mirror of
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164 lines
6.4 KiB
C
164 lines
6.4 KiB
C
/*
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* JZ4760 board definitions.
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*
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* Copyright (c) 2005-2008 Ingenic Semiconductor Inc.
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*/
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#ifndef __BOARD_JZ4760_H__
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#define __BOARD_JZ4760_H__
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//#define DEBUG
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//#define CONFIG_FPGA
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//#define CFG_DIV 2 /* for FPGA */
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//#define CONFIG_SDRAM_MDDR
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//#define CONFIG_SDRAM_DDR1
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//#define CONFIG_SDRAM_DDR2
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//#define CONFIG_MOBILE_SDRAM
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#if (!defined(CONFIG_SDRAM_MDDR) && !defined(CONFIG_SDRAM_DDR1) && !defined(CONFIG_SDRAM_DDR2))
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/*-----------------------------------------------------------------------
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* SDRAM Info.
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*/
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#define CONFIG_NR_DRAM_BANKS 1 /* SDRAM BANK Number: 1, 2*/
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#define CONFIG_MOBILE_SDRAM 1 /* use mobile sdram */
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#ifndef CONFIG_MOBILE_SDRAM
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// SDRAM paramters
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#define SDRAM_BW16 0 /* Data bus width: 0-32bit, 1-16bit */
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#define SDRAM_BANK4 1 /* Banks each chip: 0-2bank, 1-4bank */
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#define SDRAM_ROW 13 /* Row address: 11 to 13 */
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#define SDRAM_COL 9 /* Column address: 8 to 12 */
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#define SDRAM_CASL 2 /* CAS latency: 2 or 3 */
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// SDRAM Timings, unit: ns
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#define SDRAM_TRAS 45 /* RAS# Active Time */
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#define SDRAM_RCD 20 /* RAS# to CAS# Delay */
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#define SDRAM_TPC 20 /* RAS# Precharge Time */
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#define SDRAM_TRWL 7 /* Write Latency Time */
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#define SDRAM_TREF 7812 /* Refresh period: 4096 refresh cycles/64ms */
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#else /* Mobile SDRAM */
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// SDRAM paramters
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#define SDRAM_BW16 0 /* Data bus width: 0-32bit, 1-16bit */
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#define SDRAM_BANK4 1 /* Banks each chip: 0-2bank, 1-4bank */
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#define SDRAM_ROW 13 /* Row address: 11 to 13 */
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#define SDRAM_COL 9 /* Column address: 8 to 12 */
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#define SDRAM_CASL 3 /* CAS latency: 2 or 3 */
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// SDRAM Timings, unit: ns
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#define SDRAM_TRAS 50 /* RAS# Active Time */
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#define SDRAM_RCD 18 /* RAS# to CAS# Delay */
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#define SDRAM_TPC 20 /* RAS# Precharge Time */
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#define SDRAM_TRWL 7 /* Write Latency Time */
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#define SDRAM_TREF 7812 /* Refresh period: 4096 refresh cycles/64ms */
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#endif /* CONFIG_MOBILE_SDRAM */
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#else /* CONFIG_DDRC */
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/*--------------------------------------------------------------------------------
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* DDR2 info
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*/
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/* Chip Select */
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#define DDR_CS1EN 0 // CSEN : whether a ddr chip exists 0 - un-used, 1 - used
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#define DDR_CS0EN 1
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#define DDR_DW32 1 /* 0 - 16-bit data width, 1 - 32-bit data width */
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/* SDRAM paramters */
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#if defined(CONFIG_SDRAM_DDR2) // ddr2
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#define DDR_ROW 13 /* ROW : 12 to 14 row address */
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#define DDR_COL 10 /* COL : 8 to 10 column address */
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#define DDR_BANK8 1 /* Banks each chip: 0-4bank, 1-8bank */
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#define DDR_CL 3 /* CAS latency: 1 to 7 */
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/*
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* ddr2 controller timing1 register
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*/
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#define DDR_tRAS 45 /*tRAS: ACTIVE to PRECHARGE command period to the same bank. */
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#define DDR_tRTP 8 /* 7.5ns READ to PRECHARGE command period. */
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#define DDR_tRP 42 /* tRP: PRECHARGE command period to the same bank */
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#define DDR_tRCD 42 /* ACTIVE to READ or WRITE command period to the same bank. */
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#define DDR_tRC 60 /* ACTIVE to ACTIVE command period to the same bank.*/
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#define DDR_tRRD 8 /* ACTIVE bank A to ACTIVE bank B command period. */
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#define DDR_tWR 15 /* WRITE Recovery Time defined by register MR of DDR2 memory */
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#define DDR_tWTR 2 /* unit: tCK. WRITE to READ command delay. */
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/*
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* ddr2 controller timing2 register
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*/
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#define DDR_tRFC 128 /* ns, AUTO-REFRESH command period. */
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#define DDR_tMINSR 6 /* Minimum Self-Refresh / Deep-Power-Down */
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#define DDR_tXP 2 /* EXIT-POWER-DOWN to next valid command period: 1 to 8 tCK. */
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#define DDR_tMRD 2 /* unit: tCK. Load-Mode-Register to next valid command period: 1 to 4 tCK */
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/*
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* ddr2 controller refcnt register
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*/
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#define DDR_tREFI 7800 /* Refresh period: ns */
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#elif defined(CONFIG_SDRAM_MDDR) // ddr1 and mddr
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#define DDR_ROW 14 /* ROW : 12 to 14 row address */
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#define DDR_COL 10 /* COL : 8 to 10 column address */
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#define DDR_BANK8 0 /* Banks each chip: 0-4bank, 1-8bank */
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#define DDR_CL 3 /* CAS latency: 1 to 7 */
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/*
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* ddr2 controller timing1 register
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*/
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#define DDR_tRAS 40 /*tRAS: ACTIVE to PRECHARGE command period to the same bank. */
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#define DDR_tRTP 12 /* 7.5ns READ to PRECHARGE command period. */
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#define DDR_tRP 15 /* tRP: PRECHARGE command period to the same bank */
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#define DDR_tRCD 20 /* ACTIVE to READ or WRITE command period to the same bank. */
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#define DDR_tRC 55 /* ACTIVE to ACTIVE command period to the same bank.*/
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#define DDR_tRRD 10 /* ACTIVE bank A to ACTIVE bank B command period. */
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#define DDR_tWR 15 /* WRITE Recovery Time defined by register MR of DDR2 memory */
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#define DDR_tWTR 2 /* WRITE to READ command delay. */
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/*
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* ddr2 controller timing2 register
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*/
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#define DDR_tRFC 90 /* ns, AUTO-REFRESH command period. */
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#define DDR_tMINSR 6 /* Minimum Self-Refresh / Deep-Power-Down */
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#define DDR_tXP 1 /* EXIT-POWER-DOWN to next valid command period: 1 to 8 tCK. */
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#define DDR_tMRD 2 /* unit: tCK Load-Mode-Register to next valid command period: 1 to 4 tCK */
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/*
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* ddr2 controller refcnt register
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*/
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#define DDR_tREFI 7800 /* Refresh period: 4096 refresh cycles/64ms */
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#elif defined(CONFIG_SDRAM_DDR1) // ddr1 and mddr
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#define DDR_ROW 13 /* ROW : 12 to 14 row address */
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#define DDR_COL 10 /* COL : 8 to 10 column address */
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#define DDR_BANK8 0 /* Banks each chip: 0-4bank, 1-8bank */
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#define DDR_CL 3 /* CAS latency: 1 to 7 */
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#define DDR_CL_HALF 0 /*Only for DDR1, Half CAS latency: 0 or 1 */
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/*
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* ddr2 controller timing1 register
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*/
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#define DDR_tRAS 40 /*tRAS: ACTIVE to PRECHARGE command period to the same bank. */
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#define DDR_tRTP 12 /* 7.5ns READ to PRECHARGE command period. */
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#define DDR_tRP 15 /* tRP: PRECHARGE command period to the same bank */
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#define DDR_tRCD 15 /* ACTIVE to READ or WRITE command period to the same bank. */
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#define DDR_tRC 55 /* ACTIVE to ACTIVE command period to the same bank.*/
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#define DDR_tRRD 10 /* ACTIVE bank A to ACTIVE bank B command period. */
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#define DDR_tWR 15 /* WRITE Recovery Time defined by register MR of DDR2 memory */
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#define DDR_tWTR 2 /* WRITE to READ command delay 2*tCK */
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/*
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* ddr2 controller timing2 register
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*/
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#define DDR_tRFC 70 /* ns, AUTO-REFRESH command period. */
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#define DDR_tMINSR 6 /* Minimum Self-Refresh / Deep-Power-Down */
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#define DDR_tXP 2 /* EXIT-POWER-DOWN to next valid command period: 1 to 8 tCK. */
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#define DDR_tMRD 2 /* unit: tCK. Load-Mode-Register to next valid command period: 1 to 4 tCK */
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/*
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* ddr2 controller refcnt register
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*/
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#define DDR_tREFI 7800 /* Refresh period: 4096 refresh cycles/64ms */
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#endif
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#define DDR_CLK_DIV 1 /* Clock Divider. auto refresh
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* cnt_clk = memclk/(16*(2^DDR_CLK_DIV))
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*/
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#endif /* CONFIG_DDRC */
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#endif /* __BOARD_JZ4760_H__ */
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